FDT86113LZ

Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
onsemi
FDT86113LZ
278-FDT86113LZ
MOSFET N-CH 100V 3.3A SOT223-4

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds315 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs6.8 nC @ 10 V
Product StatusActive
Supplier Device PackageSOT-223-4
Drain to Source Voltage (Vdss)100 V
Power Dissipation (Max)2.2W (Ta)
Package / CaseTO-261-4, TO-261AA
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
Mfronsemi
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs100mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
SeriesPowerTrench®
Current - Continuous Drain (Id) @ 25°C3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
HTSUS8541.29.0095
PackageTape & Reel (TR)
Base Product NumberFDT86113