2N7000,126

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Description:
NXP Semiconductors
2N7000,126
278-2N7000,126
MOSFET N-CH 60V 300MA TO92-3

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds40 pF @ 10 V
Product StatusObsolete
Supplier Device PackageTO-92-3
Drain to Source Voltage (Vdss)60 V
Power Dissipation (Max)830mW (Ta)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrNXP USA Inc.
Vgs (Max)±30V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2V @ 1mA
SeriesTrenchMOS™
Current - Continuous Drain (Id) @ 25°C300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
HTSUS8541.21.0095
PackageTape & Box (TB)
Base Product Number2N70