FET Type | N-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V | |
Product Status | Obsolete | |
Supplier Device Package | TO-92-3 | |
Drain to Source Voltage (Vdss) | 60 V | |
Power Dissipation (Max) | 830mW (Ta) | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Mfr | NXP USA Inc. | |
Vgs (Max) | ±30V | |
RoHS Status | ROHS3 Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Feature | - | |
ECCN | EAR99 | |
Mounting Type | Through Hole | |
Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 2V @ 1mA | |
Series | TrenchMOS™ | |
Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
HTSUS | 8541.21.0095 | |
Package | Tape & Box (TB) | |
Base Product Number | 2N70 | |