| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V | |
| Product Status | Active | |
| Supplier Device Package | TO-92-3 | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Power Dissipation (Max) | 1W (Tc) | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Microchip Technology | |
| Vgs (Max) | ±30V | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 1mA | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tj) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Bag | |
| Base Product Number | 2N7000 | |
