| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | |
| Product Status | Active | |
| Supplier Device Package | DIRECTFET™ MN | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | |
| Package / Case | DirectFET™ Isometric MN | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Infineon Technologies | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10.3A, 10V | |
| Vgs(th) (Max) @ Id | 4.8V @ 150µA | |
| Series | HEXFET® | |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 60A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
| Base Product Number | IRF6644 | |
