| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 156.3 nC @ 15 V | |
| Product Status | Active | |
| Supplier Device Package | TO-247-4 | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Power Dissipation (Max) | 429W (Tc) | |
| Package / Case | TO-247-4 | |
| Technology | SiC (Silicon Carbide Junction Transistor) | |
| REACH Status | REACH Unaffected | |
| Mfr | Diodes Incorporated | |
| Vgs (Max) | +19V, -8V | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| ECCN | EAR99 | |
| Grade | Automotive | |
| Mounting Type | Through Hole | |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 50A, 15V | |
| Vgs(th) (Max) @ Id | 3.6V @ 17.7mA | |
| Series | - | |
| Qualification | AEC-Q101 | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
