| Operating Temperature | -55°C ~ 175°C (TJ) | |
| FET Feature | Standard | |
| Configuration | 2 N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 864pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V | |
| Grade | Automotive | |
| Mounting Type | Surface Mount | |
| Product Status | Active | |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Supplier Device Package | PowerDI5060-8 (SWP) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Series | - | |
| Qualification | AEC-Q101 | |
| Package / Case | 8-PowerTDFN | |
| Technology | MOSFET (Metal Oxide) | |
| Power - Max | 2.5W (Ta), 37.5W (Tc) | |
| REACH Status | REACH Unaffected | |
| Mfr | Diodes Incorporated | |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta), 33.2A (Tc) | |
| Package | Tape & Reel (TR) | |
| RoHS Status | ROHS3 Compliant |
