| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 7180 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 77.5 nC @ 10 V | |
| Product Status | Active | |
| Supplier Device Package | TO-263AB (D2PAK) | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Power Dissipation (Max) | 6W (Ta), 166.7W (Tc) | |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Diodes Incorporated | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Grade | Automotive | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 90A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Series | - | |
| Qualification | AEC-Q101 | |
| Current - Continuous Drain (Id) @ 25°C | 192A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
