| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 2085 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
| Product Status | Active | |
| Supplier Device Package | TO-220-3 | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Power Dissipation (Max) | 2.3W (Ta), 156W (Tc) | |
| Package / Case | TO-220-3 | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Diodes Incorporated | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 99A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Base Product Number | DMT10 |
