DMT10H015LFG-13

Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
Diodes Incorporated
DMT10H015LFG-13
278-DMT10H015LFG-13
MOSFET N-CH 100V PWRDI3333

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs33.3 nC @ 10 V
Product StatusActive
Supplier Device PackagePOWERDI3333-8
Drain to Source Voltage (Vdss)100 V
Power Dissipation (Max)2W (Ta), 35W (Tc)
Package / Case8-PowerVDFN
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrDiodes Incorporated
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs13.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Series-
Current - Continuous Drain (Id) @ 25°C10A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
HTSUS8541.29.0095
PackageTape & Reel (TR)
Base Product NumberDMT10