DMT10H010LSSQ-13

Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
Diodes Incorporated
DMT10H010LSSQ-13
278-DMT10H010LSSQ-13
MOSFET BVDSS: 61V~100V SO-8 T&R

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds4166 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs58.4 nC @ 10 V
Product StatusActive
Supplier Device Package8-SO
Drain to Source Voltage (Vdss)100 V
Power Dissipation (Max)1.9W (Ta)
Package / Case8-SOIC (0.154", 3.90mm Width)
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrDiodes Incorporated
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
GradeAutomotive
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Series-
QualificationAEC-Q101
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
HTSUS8541.29.0095
PackageTape & Reel (TR)