DMT10H009LH3

Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
Diodes Incorporated
DMT10H009LH3
278-DMT10H009LH3
MOSFET N-CH 100V 84A TO251

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs20.2 nC @ 4.5 V
Product StatusActive
Supplier Device PackageTO-251
Drain to Source Voltage (Vdss)100 V
Power Dissipation (Max)96W (Tc)
Package / CaseTO-251-3 Stub Leads, IPak
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrDiodes Incorporated
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Series-
Current - Continuous Drain (Id) @ 25°C84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
HTSUS8541.29.0095
PackageTube
Base Product NumberDMT10