| FET Type | P-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 5 V | |
| Product Status | Active | |
| Supplier Device Package | X1-DFN1006-3 | |
| Drain to Source Voltage (Vdss) | 65 V | |
| Power Dissipation (Max) | 500mW | |
| Package / Case | 3-UFDFN | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Diodes Incorporated | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 100mA, 5V | |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 192mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 5V | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
