FET Type | P-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 0.5 nC @ 5 V | |
Product Status | Active | |
Supplier Device Package | SOT-23-3 | |
Drain to Source Voltage (Vdss) | 60 V | |
Power Dissipation (Max) | 520mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Mfr | Diodes Incorporated | |
Vgs (Max) | ±30V | |
RoHS Status | ROHS3 Compliant | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Feature | - | |
ECCN | EAR99 | |
Grade | Automotive | |
Mounting Type | Surface Mount | |
Rds On (Max) @ Id, Vgs | 10Ohm @ 100mA, 5V | |
Vgs(th) (Max) @ Id | 2V @ 1mA | |
Series | - | |
Qualification | AEC-Q101 | |
Current - Continuous Drain (Id) @ 25°C | 186mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 5V | |
HTSUS | 8541.21.0095 | |
Package | Tape & Reel (TR) | |