| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| FET Type | P-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 54 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.6 nC @ 8 V | |
| Grade | Automotive | |
| Mounting Type | Surface Mount | |
| Product Status | Active | |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 400mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA | |
| Supplier Device Package | X2-DFN1006-3 | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Series | - | |
| Power Dissipation (Max) | 500mW (Ta) | |
| Qualification | AEC-Q101 | |
| Package / Case | 3-XFDFN | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Diodes Incorporated | |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) | |
| Vgs (Max) | ±8V | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Package | Tape & Reel (TR) | |
| RoHS Status | ROHS3 Compliant |
