| FET Type | P-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 49 pF @ 16 V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 4.5 V | |
| Product Status | Active | |
| Supplier Device Package | X1-DFN1006-3 | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Power Dissipation (Max) | 550mW (Ta) | |
| Package / Case | 3-UFDFN | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Diodes Incorporated | |
| Vgs (Max) | ±6V | |
| RoHS Status | ROHS3 Compliant | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Grade | Automotive | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 430mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Series | - | |
| Qualification | AEC-Q101 | |
| Current - Continuous Drain (Id) @ 25°C | 990mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| HTSUS | 8541.29.0095 | |
| Package | Bulk | |
| Base Product Number | DMP2900 |
