| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 41 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.04 nC @ 10 V | |
| Product Status | Active | |
| Supplier Device Package | X2-DFN1010-4 (Type B) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Power Dissipation (Max) | 600mW (Ta) | |
| Package / Case | 4-XDFN Exposed Pad | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Diodes Incorporated | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 40mA, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| HTSUS | 8541.21.0095 | |
| Package | Tape & Reel (TR) | |
| Base Product Number | DMN65 |
