| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | Standard | |
| Configuration | 2 N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 523pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 10V | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Product Status | Active | |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 1.7A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.4V @ 160µA | |
| Supplier Device Package | X4-DSN1111-4 | |
| Drain to Source Voltage (Vdss) | 20V | |
| Series | - | |
| Package / Case | 4-XFBGA, DSBGA | |
| Technology | MOSFET (Metal Oxide) | |
| Power - Max | 1W (Ta) | |
| REACH Status | REACH Unaffected | |
| Mfr | Diodes Incorporated | |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta) | |
| HTSUS | 8541.29.0095 | |
| Package | Bulk | |
| RoHS Status | ROHS3 Compliant | |
| Base Product Number | DMN2030 |
