| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| Configuration | 2 N-Channel (Dual) Common Source | |
| Input Capacitance (Ciss) (Max) @ Vds | 647pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 14.8nC @ 10V | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Product Status | Active | |
| Rds On (Max) @ Id, Vgs | 20.2mOhm @ 6.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 950mV @ 250µA | |
| Supplier Device Package | U-DFN2030-6 (Type B) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Series | - | |
| Package / Case | 6-UFDFN Exposed Pad | |
| Technology | MOSFET (Metal Oxide) | |
| Power - Max | 810mW (Ta) | |
| REACH Status | REACH Unaffected | |
| Mfr | Diodes Incorporated | |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta), 21A (Tc) | |
| HTSUS | 8541.29.0095 | |
| Package | Tape & Reel (TR) | |
| RoHS Status | ROHS3 Compliant | |
| Base Product Number | DMN2024 |
