| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 1083 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 27.9 nC @ 10 V | |
| Product Status | Active | |
| Supplier Device Package | U-DFN2020-6 (Type F) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Power Dissipation (Max) | 1.3W (Ta) | |
| Package / Case | 6-UDFN Exposed Pad | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Unaffected | |
| Mfr | Diodes Incorporated | |
| Vgs (Max) | ±12V | |
| RoHS Status | ROHS3 Compliant | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 8.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 12.8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| HTSUS | 8541.29.0095 | |
| Package | Bulk | |
| Base Product Number | DMN2009 |
