DMN2005UFGQ-7

Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
Diodes Incorporated
DMN2005UFGQ-7
278-DMN2005UFGQ-7
MOSFET N-CH 20V 18A PWRDI3333

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds6495 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs164 nC @ 10 V
Product StatusActive
Supplier Device PackagePOWERDI3333-8
Drain to Source Voltage (Vdss)20 V
Power Dissipation (Max)1.05W (Ta)
Package / Case8-PowerVDFN
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrDiodes Incorporated
Vgs (Max)±12V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
GradeAutomotive
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs4.6mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Series-
QualificationAEC-Q101
Current - Continuous Drain (Id) @ 25°C18A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
HTSUS8541.29.0095
PackageTape & Reel (TR)
Base Product NumberDMN2005