DMN10H099SFG-7

Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
Diodes Incorporated
DMN10H099SFG-7
278-DMN10H099SFG-7
MOSFET N-CH 100V 4.2A PWRDI3333
1+:$0.41083
10+:$0.40006
30+:$0.39289
InStock Quantity: 22

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs25.2 nC @ 10 V
Product StatusActive
Supplier Device PackagePOWERDI3333-8
Drain to Source Voltage (Vdss)100 V
Power Dissipation (Max)980mW (Ta)
Package / Case8-PowerVDFN
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Unaffected
MfrDiodes Incorporated
Vgs (Max)±20V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Series-
Current - Continuous Drain (Id) @ 25°C4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
HTSUS8541.21.0095
PackageTape & Reel (TR)
Base Product NumberDMN10