Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Feature | - | |
FET Type | N-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 409 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 4 V | |
Mounting Type | Surface Mount | |
Product Status | Active | |
Rds On (Max) @ Id, Vgs | 21mOhm @ 1.8A, 4.5V | |
Vgs(th) (Max) @ Id | 1.2V @ 250µA | |
Supplier Device Package | X2-TSN0808-4 | |
Drain to Source Voltage (Vdss) | 12 V | |
Series | - | |
Power Dissipation (Max) | 690mW | |
Package / Case | 4-XFDFN | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Mfr | Diodes Incorporated | |
Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta) | |
Vgs (Max) | ±8V | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Package | Tape & Reel (TR) | |
RoHS Status | ROHS3 Compliant |