FET Type | N-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 603 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 18.4 nC @ 10 V | |
Product Status | Active | |
Supplier Device Package | TO-251 | |
Drain to Source Voltage (Vdss) | 700 V | |
Power Dissipation (Max) | 68W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Mfr | Diodes Incorporated | |
Vgs (Max) | ±30V | |
RoHS Status | ROHS3 Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Feature | - | |
ECCN | EAR99 | |
Grade | Automotive | |
Mounting Type | Through Hole | |
Rds On (Max) @ Id, Vgs | 900mOhm @ 1.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Series | - | |
Qualification | AEC-Q101 | |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
HTSUS | 8541.29.0095 | |
Package | Tube | |
Base Product Number | DMJ70 | |