DMJ65H650SCTI

Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
Diodes Incorporated
DMJ65H650SCTI
278-DMJ65H650SCTI
MOSFET N-CH 650V 10A ITO220AB

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds639 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs12.9 nC @ 10 V
Product StatusObsolete
Supplier Device PackageITO-220AB (Type TH)
Drain to Source Voltage (Vdss)650 V
Power Dissipation (Max)31W (Tc)
Package / CaseTO-220-3 Full Pack, Isolated Tab
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Affected
MfrDiodes Incorporated
Vgs (Max)±30V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Series-
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Base Product NumberDMJ65