Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Feature | Logic Level Gate | |
Configuration | N and P-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 422pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 12.3nC @ 10V | |
ECCN | EAR99 | |
Mounting Type | Surface Mount | |
Product Status | Active | |
Rds On (Max) @ Id, Vgs | 55mOhm @ 3.4A, 10V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Supplier Device Package | TSOT-26 | |
Drain to Source Voltage (Vdss) | 30V | |
Series | - | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Technology | MOSFET (Metal Oxide) | |
Power - Max | 850mW | |
REACH Status | REACH Unaffected | |
Mfr | Diodes Incorporated | |
Current - Continuous Drain (Id) @ 25°C | 3.8A, 2.5A | |
HTSUS | 8541.21.0095 | |
Package | Tape & Reel (TR) | |
RoHS Status | ROHS3 Compliant | |
Base Product Number | DMG6601 | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |