DMG4N65CTI

Manufacturer:
Mfr. Part #:
onzuu Part #:
Datasheet:
Description:
Diodes Incorporated
DMG4N65CTI
278-DMG4N65CTI
MOSFET N-CH 650V 4A ITO220AB

Technical specifications

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs13.5 nC @ 10 V
Product StatusObsolete
Supplier Device PackageITO-220AB
Drain to Source Voltage (Vdss)650 V
Power Dissipation (Max)8.35W (Ta)
Package / CaseTO-220-3 Full Pack, Isolated Tab
TechnologyMOSFET (Metal Oxide)
REACH StatusREACH Affected
MfrDiodes Incorporated
Vgs (Max)±30V
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
ECCNEAR99
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Series-
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
HTSUS8541.29.0095
PackageTube
Base Product NumberDMG4