| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V | |
| Product Status | Obsolete | |
| Supplier Device Package | TO-220-3 | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Power Dissipation (Max) | 2.19W (Ta) | |
| Package / Case | TO-220-3 | |
| Technology | MOSFET (Metal Oxide) | |
| REACH Status | REACH Affected | |
| Mfr | Diodes Incorporated | |
| Vgs (Max) | ±30V | |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Feature | - | |
| ECCN | EAR99 | |
| Mounting Type | Through Hole | |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| HTSUS | 8541.29.0095 | |
| Package | Tube | |
| Base Product Number | DMG4 | |
