FET Type | P-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 608 pF @ 6 V | |
Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V | |
Product Status | Active | |
Supplier Device Package | SOT-23-3 | |
Drain to Source Voltage (Vdss) | 20 V | |
Power Dissipation (Max) | 800mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Technology | MOSFET (Metal Oxide) | |
REACH Status | REACH Unaffected | |
Mfr | Diodes Incorporated | |
Vgs (Max) | ±8V | |
RoHS Status | ROHS3 Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Feature | - | |
ECCN | EAR99 | |
Mounting Type | Surface Mount | |
Rds On (Max) @ Id, Vgs | 130mOhm @ 2.8A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Series | - | |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
HTSUS | 8541.21.0095 | |
Package | Tape & Reel (TR) | |
Base Product Number | DMG2301 | |